may 2009 1 mitsubishi high voltage diode module RM200DG-130S high power switching use insulated type i f ................................................................... 200a v rrm ...................................................... 6500v high insulated type 2-element in a pack aisic baseplate application tr action drives, high reliability converters / inverters, dc choppers RM200DG-130S outline drawing & circuit diagram dimensions in mm high voltage diode module high voltage diode module (k) (k) 2 4 (a) (a) 1 3 circuit diagram 42 3 1 6- 7 mounting holes screwing depth min. 16.5 4-m8 nuts +1.0 0 48 130 0.5 57 0.25 57 0.25 17 0.1 44 0.3 22 0.3 124 0.25 140 0.5 16.5 0.3 5 0.15 40.4 0.5 61.2 0.5 34.4 0.5 >pet+pbt<
may 2009 2 mitsubishi high voltage diode module RM200DG-130S high power switching use insulated type maximum ratings symbol item conditions unit ratings high voltage diode module high voltage diode module min typ max electrical characteristics symbol item conditions limits unit note 1. it doesn't include the voltage drop by internal lead resistance. 2. e rec is the integral of 0.1v r x 0.1i rr x dt. v rm = v rrm i f = 200 a t j = 25 c t j = 125 c t j = 25 c t j = 125 c repetitive reverse current forward voltage (note 1) reverse recovery time reverse recovery current reverse recovery charge reverse recovery energy (note 2) 3 30 ma v s a c j/p 3 4.00 3.60 1.0 420 300 0.7 i rrm v fm t rr i rr q rr e rec v r = 3600 v, i f = 200 a di/dt = ?70 a/ s l s =100nh, t j = 125 c repetitive peak reverse voltage non-repetitive peak reverse voltage reverse dc voltage dc forward current surge forward current current-squared, time integration isolation voltage partial discharge extinction voltage junction temperature operating temperature storage temperature t j = ?0 c t j = +25 c t j = +125 c t j = ?0 c t j = +25 c t j = +125 c t j = 25 c t c = 25 c t j = 25 c start, t w = 8.3 ms half sign wave t j = 25 c start, t w = 8.3 ms half sign wave charged part to the baseplate rms sinusoidal, 60hz 1min. rms sinusoidal, 60hz, q pd 10 pc 5800 6300 6500 5800 6300 6500 4500 200 1600 11 10200 5100 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 v v v a a ka 2 s v v c c c v rrm v rsm v r(dc) i f i fsm i 2 t v iso v e t j t op t stg
may 2009 3 mitsubishi high voltage diode module RM200DG-130S high power switching use insulated type high voltage diode module high voltage diode module min typ max thermal characteristics symbol item conditions limits unit min typ max mechanical characteristics symbol item conditions limits unit r th(j-c) r th(c-f) junction to case (per 1/2 module) case to fin, grease = 1w/m? d (c-f) =100 m, (per 1/2 module) k/kw k/kw thermal resistance contact thermal resistance 66.0 48.0 m t m s m cti d a d s l p ce r cc?ee m8: main terminals screw m6: mounting screw tc = 25 c n? n? kg mm mm nh m ? mounting torque mass comparative tracking index clearance creepage distance internal inductance internal lead resistance 15.0 6.0 1.0 44 0.27 7.0 3.0 600 26 56 performance curves forward voltage v f (v) forward current i f (a) reverse recovery energy characteristics (typical) forward characteristics (typical) t j = 25 c t j = 125 c 0 400 300 200 100 0 1.2 1.0 0.8 0.6 0.4 0.2 012345678 0 100 200 300 400 500 forward current i f (a) reverse recovery energy e rec (j/p) v r = 3600v, di/dt = 670a/ s t j = 125 c, l s = 100nh
may 2009 4 forward current i f (a) reverse voltage v r (v) reverse recovery safe operating area (rrsoa) reverse recovery characteristics (typical) normalized transient thermal impedance transient thermal impedance characteristics 0 0.2 0.4 0.6 0.8 1.0 1.2 0 2000 4000 6000 8000 0 100 200 300 400 500 time (s) 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 reverse recovery time t rr ( s) reverse recovery current i rr (a) reverse recovery current i rr (a) 10 2 10 1 23 57 10 3 23 5 447 v r 4500v, di/dt 1000a/ s t j = 125 c v r = 3600v, di/dt = 670a/ s t j = 125 c, l s = 100nh i rr t rr r th(j?) = 66k/kw mitsubishi high voltage diode module RM200DG-130S high power switching use insulated type high voltage diode module high voltage diode module zr th( j ? ) ( t ) = n i=1 i 1?xp t i t ? ? ? ? r i [k/kw] i [sec] 1 0.0059 0.0002 2 0.0978 0.0074 3 0.6571 0.0732 4 0.2392 0.4488
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